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| Savybės | |
|---|---|
| Flash Memory Cell Technology | Triple-Level Cell |
| Maximum Random Read Rate | 1500000 IOPS |
| Maximum Random Write Rate | 1500000 IOPS |
| Maximum Sequential Read Rate | 11000 Megabaits sekundē |
| Maximum Sequential Write Rate | 9500 Megabaits sekundē |
| Memory Technology | 3D NAND |
| Solid State Drive Features | NVMe Support |
| Storage Capacity | 1 terabaits |
| Supports Data Channel | PCIe NVMe 5.0 x 4 |
| Total Bytes Written (TBW) | 600 terabaits |
